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FRAM is non-volatile and can easily be read/written 10 trillion times.
It is similar to Dynamic Direct Access Memory (DRAM), only with a ferroelectric layer instead of a dielectric layer.
It is particularly suitable for use with low power data loggers and for buffering data in the absence of a stable voltage source.
The FRAM chip used provides 8 KB of memory and uses a clock of up to 20 MHz.
Address: 1010+A2+A1+A0
Standard: 0x50
VCC / Logic: 2.7-5.5V