IGBT power transistor FGA25N120 1200V 313W
FGA25N120 power transistor uses NPT technology, which offers very parameter distribution, high toughness, performance and temperature parallel switching functionality.
This power transistor for motor controls, inverters and switching power supplies.
Designed for motor controls, inverters, switching power supplies.
Collector emitter voltage: 1200 V.
DC: 46 V (at 25 °C), 25 V (at 100 °C).
Short circuit resistance time: 10.
Power loss: 313 W (at 25 °C).
Package: TO-247AC
Pin length: approx. 0.8
Total size (L x W x D): approx. 1.6 x 0.6 x 0.2.
Box contents: 1x FGA25N120 power transistor