Feature

●Collector emitter voltage: 1200 V
●Short circuit resistance: 10 s
●Current collector DC: 46 V (at 25 °C), 25 V (at 100 °C)
●Designed for motor control, inverter, SMPS
●Power dissipation: 313 W (at 25 °C)


Description

Hagsnec Power transistor FGA25N120 uses NPT technology, which provides the distribution of very tight parameters, high robustness, temperature performance and parallel switching capacity.
This power transistor is designed for motor control, inverters and SMPS.
Color: As picture show
Package Content: 10 x Power Transistor

Only the above package content, other products are not included.
Note: Due to lighting and screen settings, the colour of the item may be slightly different from the pictures. Allowed measurement error is +/- 1-3 cm.